2SJ681_09 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)

R_{DS (ON)} − Tc
−0.4
Common source
Pulse test
−0.3
−0.2
VGS = −4 V
−0.1
ID = −5 A
−2.5
−1.2
−5
−2.5
−1.2
VGS = −10 V
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SJ681
10
Common source
Tc = 25°C
Pulse test
I_DR − V_DS
−10
−5
−3
1
−1
VGS = 0 V
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain−source voltage V_DS (V)
Capacitance – V_DS
10000
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1000
Ciss
100
Coss
10
−0.1
Crss
−1
−10
−100
Drain−source voltage V_DS (V)
V_th − Tc
−2.0
Common source
VDS = −10 V
ID = 1 mA
−1.6
Pulse test
−1.2
−0.8
−0.4
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
P_D − Tc
40
30
20
10
0
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output
characteristics
−50
VDS
−25
Common source
ID = −5 A
−40
Ta = 25°C
−20
Pulse test
−30
−15
−20
−10
0
0
−12V
−24V
VDD = −48 V
VGS
5
10
15
20
25
Total gate charge Q_g (nC)
−10
−5
0
30
4
2009-09-29