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2SJ680_09 Datasheet, PDF (5/6 Pages) Toshiba Semiconductor – Switching Applications | |||
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2SJ680
rth â tw
3
1
0.5
0.3
0.1
0.05
0.03
Duty = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.01
0.01
0.005
0.003
0.001
10 μ
100 μ
1m
10 m
100 m
Pulse width tw (s)
PDM
t
T
Duty = t/T
Rth (ch-c) = 6.25°C/W
1
10
100
Safe operating area
â30
ID max (pulse) *
â10
â5
â3
1 ms*
100 μs*
â1
â0.5
â0.3
DC
operation
â0.1
â0.05 * Single nonrepetitive pulse
â0.03 Tc = 25°C
Curves must be derated
â0.01 linearly with increase in
temperature.
â0.005
â0.1 â0.3 â1
â3
â10
VDSS max
â30 â100 â300
Drain-source voltage VDS (V)
EAS â Tch
100
80
60
40
20
0
25
50
75
100
125
150
Channel temperature Tch (°C)
15 V
â15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = â50 V, L = 25.2 mH
Waveform
ÎAS
=
1
2
â
L â
I2
â
ââââ
BVDSS
BVDSS â VDD
âââ â
5
2009-09-29
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