2SJ680_09 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Switching Applications

R_{DS (ON)} – Tc
6
Common source
VGS = −10 V
5 _{pulse test}
ID = −1.5 A
−1.2
4
3
−1.0
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
−10
Common source
Tc = 25°C
pulse test
I_DR – V_DS
−1
2SJ680
−0.1
0
−5
−3
0.2
0.4
−1
VGS = 0 V
0.6
0.8
1
Drain-source voltage V_DS (V)
Capacitance – V_DS
1000
Ciss
100
Coss
10
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
−0.1
−1
Crss
−10
−100
Drain-source voltage V_DS (V)
V_th – Tc
5
Common source
4
VDS = 10 V
ID = 1 mA
pulse test
3
2
1
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
P_D – Tc
40
30
20
10
0
0
40
80
120
160
Case temperature Tc (°C)
Dynamic input/output characteristics
VDS
−160
−120
−80
−40
VDS = −40 V
−180
−80
VGS
−16
−12
Common source
ID = −2.5 A
Tc = 25°C
pulse test
−8
−4
0
0
4
8
12
16
20
Total gate charge Q_g (nC)
4
2009-09-29