TLP176D_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Photocoupler GaAs IRED & Photo-MOSFET

I_F – Ta
100
80
60
40
20
0
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
TLP176D
350
300
250
200
150
100
50
0
−20
I_ON – Ta
0
20
40
60
80
100
Ambient temperature Ta (°C)
100
Ta = 25°C
30
10
I_F – V_F
3
1
0.3
0.1
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Forward voltage V_F (V)
300
Ta = 25°C
IF = 5 mA
200
I_ON – V_ON
100
0
−100
−200
−300
−1
−0.5
0
0.5
1
MOSFET ON-state voltage V_ON (V)
10
ION = 200 mA
IF = 5 mA
8
t<1s
R_ON – Ta
6
4
2
0
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
5
ION = 200 mA
t<1s
4
I_FT – Ta
3
2
1
0
−40 −20
0
20
40
60
80
100
Ambient temperature Ta (°C)
4
2007-10-01