TLP176D_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Photocoupler GaAs IRED & Photo-MOSFET

Individual Electrical Characteristics (Ta = 25°C)
Characteristics
LED
Detector
Forward voltage
Reverse current
Capacitance
Off-state current
Capacitance
Symbol
V_F
I_R
C_T
I_OFF
C_OFF
Test Condition
I_F = 10 mA
V_R = 5 V
V = 0, f = 1 MHz
V_OFF = 200 V
V = 0, f = 1 MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristics
Trigger LED current
On-state resistance
Symbol
I_FT
R_ON
Test Condition
I_ON = 200 mA
I_ON = 200 mA, I_F = 5 mA
Isolation Characteristics (Ta = 25°C)
Characteristics
Capacitance input to output
Isolation resistance
Isolation voltage
Symbol
C_S
R_S
BV_S
Test Condition
V_S = 0, f = 1 MHz
V_S = 500 V, R.H. ≤ 60%
AC, 1 minute
AC, 1 second, in oil
DC, 1 minute, in oil
TLP176D
Min Typ. Max Unit
1.0 1.15 1.3
V
⎯
⎯
10
μA
⎯
30
⎯
pF
⎯
⎯
1
μA
⎯ 100 ⎯
pF
Min Typ. Max Unit
⎯
1
⎯
5
3
mA
8
Ω
Min Typ. Max Unit
⎯
0.8
⎯
pF
5×
10¹⁰
10¹⁴
⎯
Ω
1500 ⎯
⎯
Vrms
⎯ 3000 ⎯
⎯ 3000 ⎯ Vdc
Switching Characteristics (Ta = 25°C)
Characteristics
Turn-on time
Turn-off time
Note: Switching time test circuit
Symbol
t_ON
t_OFF
Test Condition
R_L = 200 Ω
V_DD = 20 V, I_F = 5 mA
R_L = 200 Ω
V_DD = 20 V, I_F = 5 mA
Min Typ. Max Unit
(Note) _⎯
0.6 1.5
ms
(Note) _⎯
0.1 1.0
ms
I_{F 1}
2
4
R_L
V_DD
V_OUT
3
I_F
V_OUT
10%
t_ON
90%
t_OFF
3
2007-10-01