TLP176D_07 Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Photocoupler GaAs IRED & Photo-MOSFET

TLP176D
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta ≥ 25°C)
LED
Pulse forward current
(100 μs pulse, 100 pps)
Reverse voltage
Junction temperature
Off-state output terminal voltage
Detector
On-state current
On-state RMS current derating
(Ta ≥ 25°C)
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 min., R.H. ≤ 60%)
(Note)
I_F
ΔI_F/°C
I_FP
V_R
T_j
V_OFF
I_ON
ΔI_ON/°C
T_j
T_stg
T_opr
T_sol
BV_S
50
−0.5
1
5
125
200
200
−2.0
125
−55 to 125
−40 to 85
260
1500
mA
mA/°C
A
V
°C
V
mA
mA/°C
°C
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: Device considered a two-terminal device: pins1 and 2 shorted together and pins 3 and 4 shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min Typ. Max Unit
Supply voltage
Forward current
On-state current
Operating temperature
V_DD
I_F
I_ON
T_opr
⎯
150 200
V
5
7.5
25
mA
⎯
⎯
130 mA
−20 ⎯
65
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
2
2007-10-01