TLN119_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Infrared LED GaAs Infrared Emitter

I_E – I_F
(typ.)
50
Ta = 25°C
30
10
5
3
Sample 3
1
0.5
0.3
Sample 2
Sample 1
0.1
1
35
10
30 50
100
Forward current IF (mA)
TLN119(F)
Wavelength Characteristic
(typ.)
1.0
IF = 20mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
820 860
900
940
980 1020 1060
Wavelength λ (nm)
Radiation Pattern (typ.)
(Ta = 25°C)
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative intensity
4
2007-10-01