TLN119_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – Infrared LED GaAs Infrared Emitter

TLN119(F)
Precautions
Please be careful of the followings.
1. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be
performed after the leads have been formed.
2. Radiant intensity falls over time due to the current which flows in the infrared LED. When designing a circuit,
take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to
fluctuation in optical output is 1: 1.
I_E (t) ₌ P_O (t)
I_E (0) P_O (0)
2
2007-10-01