TLN119_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Infrared LED GaAs Infrared Emitter

TOSHIBA Infrared LED GaAs Infrared Emitter
TLN119(F)
Lead(Pb)-Free
Printers, Fax Machines
Home Electric Equipment
Opto−Electronic Switches
TLN119(F)
Unit: mm
• φ3.1mm plastic package
• Radiant intensity: I_E = 5mW / sr (typ.)
• Harf−angle value: θ1 / 2 = ±30°(typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta > 25°C)
Pulse forward current
(Note 1)
Reverse voltage
Operating temperature range
Storage temperature range
Soldering temperature (3 s)
I_F
ΔI_F / °C
I_FP
V_R
T_opr
T_stg
T_sol
(Note 2)
60
−0.8
600
5
−25~85
−30~100
260
mA
mA / °C
mA
V
°C
°C
°C
TOSHIBA
4−4E1
Weight: 0.12 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Pin Connection
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
1. Anode
1
2 _{2. Cathode}
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Pulse width ≦ 100μs, repetitive frequency = 100Hz
Note 2: Soldering must be performed 2mm from the bottom of the package body.
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
V_R
I_R
I_E
P_O
λ_P
Δλ
θ¹
2
Test Condition
I_F = 10 mA
V_R = 5 V
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
I_F = 20 mA
TLN119 (F)
TLN119 (B,F)
Min Typ. Max Unit
1.00 1.15 1.30
V
⎯
⎯
10
μA
2.5 5.0 10.0
mW / sr
4.2
⎯ 10.0
⎯
4.5
⎯
mW
⎯
945
⎯
nm
⎯
50
⎯
nm
⎯
±30
⎯
°
1
2007-10-01