TLN110_07 Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

TLN110(F)
Wavelength Characteristic (typ.)
1.0
IF = 50mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
880 900
920
940
960
980 1000
Wavelength λ (nm)
Radiation Pattern
(typ.)
(Ta = 25°C)
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative intensity
3000
1000
500
300
I_FP – P_W
Ta = 25°C
f = 100Hz
100
10kHz 2kHz 500Hz
50
5kHz
1kHz
200Hz
30
10
3μ
10μ 30μ 100μ 300μ 1m 3m 10m
Pulse width P_W (s)
Relative I_E – Ta
(typ.)
10
5
3
1
0.5
0.3
-20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Distance Characteristics
(near distance) ¹⁰⁰
1000
I_E = 20mW / sr
10
100
I_E = 10mW / sr
1
10
0.1
1
1
10
100
Distance d (mm)
4
2007-10-01