TLN110_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

TOSHIBA Infrared LED GaAs Infrared Emitter
TLN110(F)
Lead(Pb)-Free
Remote−control Systems
Opto−electronic Switches
TLN110(F)
Unit: mm
• High radiant intensity: I_E = 30mW / sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• TPS703(F) PIN photodiode with resin to screen out visible light
available as detector for remote control
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
I_F
100
mA
Forward current derating
(Ta > 25°C)
ΔI_F / °C
−1.33
mA / °C
Pulse forward current
I_FP (Note 1)
1
A
Reverse voltage
V_R
5
V
Power dissipation
Operating temperature range
Storage temperature range
P_D
150
mW
T_opr
−20~75
°C
T_stg
−30~100
°C
TOSHIBA
4−6C4
Weight: 0.32 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Pin Connection
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
1. Anode
1
2 _{2. Cathode}
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Note 1: Pulse width ≤ 100μs, repetitive frequency = 100 Hz
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Radiant intensity
Radiant power
Capacitance
Peak emission wavelength
Spectral line half width
Half value angle
Symbol
V_F
I_R
I_E
P_O
C_T
λ_P
Δλ
θ¹
2
Test Condition
I_F = 100mA
V_R = 5V
I_F = 50mA
I_F = 50mA
V_R = 0, f = 1MHz
I_F = 50mA
I_F = 50mA
I_F = 50mA
Min Typ. Max Unit
― 1.35 1.5
V
―
―
10
μA
15
30
― mW / sr
―
9
―
mW
―
20
―
pF
―
940
―
nm
―
45
―
nm
―
±8
―
°
1
2007-10-01