TLN110_07 Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – INFRARED LED GAAS INFRARED EMITTER

TLN110(F)
I_F – Ta
120
100
80
60
40
20
0
0
20
40 60
80 100 120 140
Ambient temperature Ta (°C)
100
Ta = 25°C
50
30
I_F – V_F
(typ.)
10
5
3
1
0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
Forward voltage V_F (V)
ΔV_F / ΔTa – I_F
-2.4
-2.0
-1.6
-1.2
-0.8
-0.4
1
3
10
30
100
Forward current I_F (mA)
I_FP – V_FP
(typ.)
1000
500
300
100
50
30
10
5
Pulse width ≦100μs
3
Repetitive
Frequency = 100Hz
Ta = 25°C
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Pulse forward voltage V_FP (V)
1000
Pulse width ≦ 100μs
Repetitive
500 _{Frequency = 100Hz}
300 ^{Ta = 25°C}
I_E – I_F
(typ.)
100
50
30
10
5
3
1
0.5
0.3
0.1
1
3
10
30
100
300 1000
Forward current I_F (mA)
3
2007-10-01