TLN108_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – INFRARED LEDS PHOTO SENSORS

TLN108(F)
Radiation Pattern
(typ.)
(Ta = 25°C)
20° ^{10° 0° 10°} 20°
30°
30°
40°
40°
50°
50°
60°
60°
70°
70°
80°
80°
90°
90°
0 0.2 0.4 0.6 0.8 1.0
Relative intensity
Relative I_E – Ta
(typ.)
10
5
3
1
0.5
0.3
0.1
-40 -20 0 20 40 60 80 100 120 140
Ambient temperature Ta (°C)
3000
1000
500
300
I_FP – P_W
Ta = 25°C
f = 100Hz
100
10kHz 2kHz 500Hz
50
5kHz
1kHz
200Hz
30
10
3μ
10μ 30μ 100μ 300μ 1m 3m 10m
Pulse width P_W (s)
Coupling Characteristics With
TPS601A(F)
100
Ta = 25°C
50
30
IE = 42mW / sr
23
11.7
10
5
3
1
TPS601A(F)･･･IL = 226μA
at VCE = 3V
E = 0.1mW / cm²
0.5
0.3
0.1
1
d
3 5 10
30 50
100
Distance d (ｍｍ)
4
2007-10-01