TLN108_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – INFRARED LEDS PHOTO SENSORS

TOSHIBA Infrared LED GaAs Infrared Emitter
TLN108(F)
Lead(Pb)-Free
Opto−Electronic Switches
Tape And Card Readers
Equipment Using Infrared Transmission
• TO−18 metal package
• High radiant intensity: I_E = 20 mW/sr (typ.)
• Excellent radiant−intensity linearity. Modulation by pulse operation
and high frequency is possible.
• Highly reliable due to hermetic seal
TLN108(F)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
Forward current derating
(Ta > 25°C)
Pulse forward current
(Note 1)
Reverse voltage
Operating temperature range
Storage temperature range
I_F
ΔI_F / °C
I_FP
V_R
T_opr
T_stg
100
−1
1
5
−40~125
−55~150
mA
mA / °C
A
V
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Pulse width ≦100μs, repetitive frequency = 100 Hz
TOSHIBA
4−5Q2
Weight: 0.33 g (typ.)
Pin Connection
1
2
1. Anode
2. Cathode (case)
Markings
Product No. (TL omitted)
Monthly lot number
N108 ï½¥
Letter color：Red
Month of manufacture
(January to December denoted by letters A to L respectively)
Year of manufacture
(last digit of year of manufacture)
1
2007-10-01