TLN108_07 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – INFRARED LEDS PHOTO SENSORS

TLN108(F)
I_F – Ta
120
100
80
60
40
20
0
0
20
40 60
80 100 120 140 160
Ambient temperature Ta (°C)
I_F – V_F
(typ.)
100
50
30
Ta = 100°C
75
50
25
0
10
-30
5
3
1
0.9
1.0
1.1
1.2
1.3
1.4
1.5
Forward voltage V_F (V)
Wavelength Characteristic (typ.)
1.0
IF = 50mA
Ta = 25°C
0.8
0.6
0.4
0.2
0
900 920
940
960
980 1000 1020
Wavelength λ (nm)
I_FP – V_FP
(typ.)
1000
500
300
100
50
30
10
5
Pulse width ≦ 100μs
Repetitive frequency
3
= 100Hz
Ta = 25°C
1
1.0 1.2
1.4 1.6
1.8 2.0 2.2
2.4
Pulse forward voltage V_FP (V)
300
Pulse width ≦ 100μs
Repetitive frequency
= 100Hz
Ta = 25°C
100
I_E – I_F
(typ.)
Pulse
50
30
10
5
3
DC
1
0.5
0.3
0.1
1
3
10
30
100
300
1000
Forward current I_F (mA)
3
2007-10-01