TIM7785-35SL Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7785-35SL
Power Dissipation(PT) vs. Case Temperature(Tc)
120
100
80
60
40
20
0
40
80
120
160
200
Tc( °C )
IM3 vs. Output Power Characteristics
-10
VDS=10V
freq.=8.5GHz
-20
∆f=5MHz
-30
-40
-50
-60
30
32
34
36
38
40
Pout(dBm) @Single carrier level
4