TIM7785-35SL Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

RF PERFORMANCE
TIM7785-35SL
Output Power (Pout) vs. Frequency
VDS=10V
47 _{IDS≅8.0A}
Pin=39.5dBm
46
45
44
7.7 7.9 8.1 8.3 8.5
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=8.5GHz
VDS=10V
46
80
70
44
Pout
60
50
42
40
ηadd
30
40
20
10
34
36
38
40
Pin(dBm)
3