TIM7785-35SL Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – MICROWAVE POWER GaAs FET

TIM7785-35SL
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation (Tc= 25 °C)
Channel Temperature
Storage
SYMBOL
VDS
VGS
IDS
PT
Tch
Tstg
UNIT
V
V
A
W
°C
°C
PACKAGE OUTLINE (2-16G1B)
RATING
15
-5
26
115
175
-65 to +175
4 – C1.0
‚
0.7±0.15
•
‚
Unit in mm
• Gate
‚ Source
ƒ Drain
ƒ
20.4±0.3
24.5 MAX.
16.4 MAX.
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
2