TC55W800FT-55 Datasheet, PDF (4/13 Pages) Toshiba Semiconductor – 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM

TC55W800FT-55,-70
DC CHARACTERISTICS (Ta = -40° to 85°C, V_DD = 2.3 to 3.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN TYP MAX UNIT
I_IL
I_OH
I_OL
I_LO
l_DDO1
l_DDO2
Input Leakage
Current
V_IN = 0 V~V_DD
¾ ¾ ±1.0 mA
Output High Current
Output Low Current
Output Leakage
Current
V_OH = V_DD - 0.5 V
V_OL = 0.4 V
CE1 = V_IH or CE2 = V_IL or R/W = V_IL or OE = V_IH,
V_OUT = 0 V~V_DD
-0.5 ¾
2.1 ¾
¾ mA
¾ mA
¾ ¾ ±1.0 mA
Operating Current
CE1 = V_IL and CE2 = V_IH and
R/W = V_IH, I_OUT = 0 mA,
Other Input = V_IH/V_IL,
BYTE = V_DD or 0 V
CE1 = 0.2 V and CE2 = V_DD - 0.2 V and
R/W = V_DD - 0.2 V, I_OUT = 0 mA,
Other Input = V_DD - 0.2 V/0.2 V,
BYTE = V_DD or 0 V
55 ns ¾ ¾ 60
t_cycle 70 ns ¾ ¾ 50 mA
1 ms ¾ ¾ 10
55 ns ¾ ¾ 55
t_cycle 70 ns ¾ ¾ 45 mA
1 ms ¾ ¾
5
I_DDS1
I_DDS2
(Note)
Standby Current
CE1 = V_IH or CE2 = V_IL, BYTE = V_DD or 0 V
¾¾
2 mA
CE1 = V_DD - 0.2 V
or CE2 = 0.2 V,
V_DD = 1.5 V~3.3 V,
BYTE = V_DD or 0 V
V_DD =
Ta = 25°C
¾¾
1
3.0 V ± 10% _{Ta = -40~85°C ¾ ¾ 10}
Ta = 25°C
¾ 0.05 0.5 mA
V_DD = 3.0 V Ta = -40~40°C ¾ ¾
1
Ta = -40~85°C ¾ ¾
5
Note: In standby mode with CE1 ³ V_DD - 0.2 V, these limits are assured for the condition CE2 ³ V_DD - 0.2 V or CE2 £ 0.2 V.
CAPACITANCE (Ta = 25°C, f = 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
C_IN
C_OUT
Input Capacitance
Output Capacitance
V_IN = GND
V_OUT = GND
Note: This parameter is periodically sampled and is not 100% tested.
MAX
10
10
UNIT
pF
pF
2001-10-03 4/13