SSM6J501NU Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

V_th – Ta
-1.0
Common Source
VDS = -3 V
ID = -1 mA
-0.8
-0.6
-0.4
-0.2
0
−50
0
50
100
150
Ambient temperature Ta (°C)
10000
C – V_DS
Ciss
1000
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
100
-0.1
-1
Coss
Crss
-10
-100
Drain–source voltage V_DS (V)
SSM6J501NU
100
Common Source
VDS = -3 V
Ta = 25 °C
Pulse test
10
|Y_fs| – I_D
1
0.1
-0.01
-0.1
-1
-10
-100
Drain current I_D (A)
Dynamic Input Characteristic
-8
-6
VDD = -10 V
VDD = -16 V
-4
-2
Common Source
ID = -10.0 A
Ta = 25 °C
0
0
10
20
30
40
50
60
Total Gate Charge Qg (nC)
10000
toff
1000
tf
100
ton
tr
10
1
-0.01
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
-0.1
-1
-10
Drain current I_D (A)
I_DR – V_DS
100
Common Source
VGS = 0 V
Pulse test
10
D
I_DR
1
G
S
0.1
25 °C
0.01
100 °C
−25 °C
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
Drain–source voltage V_DS (V)
4
2011-01-25