SSM6J501NU Datasheet, PDF (3/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

I_D – V_DS
-10
VGS =-4.5 V
-8
-2.5 V
-1.5 V
-1.8 V
-6
-4
-2
Common Source
Ta = 25 °C
Pulse test
0
0
-0.1
-0.2
-0.3
Drain–source voltage V_DS (V)
SSM6J501NU
-100
-10
Common Source
VDS = -3 V
Pulse test
I_D – V_GS
-1
-0.1
Ta = 100 °C
-0.01
-0.001
−25 °C
25 °C
-0.0001
0
-0.5
-1.0
-1.5
-2.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
100
ID = -2.0 A
Common Source
Pulse test
80
60
40
25 °C
20
Ta = 100 °C
− 25 °C
0
0
-2.0
-4.0
-6.0
-8.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
100
ID = -4.0 A
Common Source
Pulse test
80
60
40
25 °C
20
Ta = 100 °C
− 25 °C
0
0
-2.0
-4.0
-6.0
-8.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – I_D
30
Common Source
Ta = 25°C
25 Pulse test
20
15
-1.5 V
-1.8 V
-2.5 V
10
VGS =-4.5 V
5
0
0
-2.0
-4.0
-6.0
-8.0
-10.0
Drain current I_D (A)
3
R_{DS (ON)} – Ta
50
Common Source
Pulse test
40
30 _{-4.0 A / -1.8 V}
ID = -2.0 A / VGS = -1.5 V
20
10
0
−50
-4.0 A / -4.5 V
-4.0 A / -2.5 V
0
50
100
150
Ambient temperature Ta (°C)
2011-01-25