SSM6J501NU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM6J501NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ)
SSM6J501NU
Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: R_DS(ON) = 43.0 mΩ (max) (@V_GS = -1.5 V)
R_DS(ON) = 26.5 mΩ (max) (@V_GS = -1.8 V)
R_DS(ON) = 19.0 mΩ (max) (@V_GS = -2.5 V)
R_DS(ON) = 15.3 mΩ (max) (@V_GS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DSS
−20
V
Gate-Source voltage
V_GSS
±8
V
Drain current
DC
I_D
−10
A
Pulse
I_DP (Note 1)
−30
Power dissipation
P_D(Note 2)
1
W
t≦10s
2
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
−55 to 150
°C
1,2,5,6: Drain
Note: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
UDFN6B
3: Gate
4: Source
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
JEITA
―
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2AA1A
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 8.5 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: The pulse width limited by max channel temperature.
Note 2: Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking(Top View)
65 4
SP1
1 23
Polarity marking
Equivalent Circuit(Top View)
6
5
4
Pin Condition(Top View)
65 4
1
2
3
Drain
Source
1 23
Polarity marking (on the top)
*Electrodes : on the bottom
1
2011-01-25