SSM6J205FE Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

10.0
|Yfs| - ID
25 °C
- 25 °C
1.0
Ta = 85 °C
0.1
-0.01
1000
Common Source
VDS = - 3 V
Ta = 25 °C
-0.1
-1
-10
Drain Current ID (A)
C - VDS
Ciss
100
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25 °C
Coss
Crs s
10
0.1
1
10
100
Drain-Source Voltage VDS (V)
PD - Ta
1000
Mounted on an FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
800
600
400
200
0
0
20
40
60
80
100
120
140
160
Ambient Temperature Ta (°C)
SSM6J205FE
-10
IDR - VDS
Common Source
VGS = 0 V
Ta = 25 °C
-1
25 °C
-0.1
-0.01
Ta = 85 °C
- 25 °C
-0.001
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage VDS (V)
1000
toff
100
tf
ton
10
tr
t - ID
Common Source
VDD = 10 V
VGS = 0 to 2.5 V
Ta = 25 °C
1
-0.01
-0.1
-1
-10
Drain Current ID (A)
4
2007-11-01