SSM6J205FE Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6J205FE
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6J205FE
High-Speed Switching Applications
Power Management Switch Applications
Unit: mm
• 1.8V drive
• P-ch 2-in-1
• Low ON-resistance:
R_on = 460 mΩ (max) (@V_GS = −1.8 V)
R_on = 306 mΩ (max) (@V_GS = −2.5 V)
R_on = 234 mΩ (max) (@V_GS = −4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
V_DS
−20
V
Gate-source voltage
V_GSS
±8
V
Drain current
DC
I_D
Pulse
I_DP
−0.8
A
−1.6
Drain power dissipation
P_{D (Note 1)}
500
mW
Channel temperature
T_ch
150
°C
1, 2, 5, 6 : Drain
Storage temperature range
T_stg
−55 to 150
°C
3
: Gate
Note: Using continuously under heavy loads (e.g. the application of
4
ES6
: Source
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2N1A
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
Weight: 3 mg (typ.)
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board (total dissipation)
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
Characteristic
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain-source forward voltage
Note 2: Pulse test
Symbol
Test Conditions
Min Typ. Max Unit
V _{(BR) DSS}
V _{(BR) DSX}
I_DSS
I_D = − 1 mA, V_GS = 0
I_D = − 1 mA, V_GS = + 8 V
V_DS = − 20 V, V_GS = 0
− 20 ⎯
⎯
V
− 12 ⎯
⎯
⎯
⎯ − 10 μA
I_GSS
V_GS = ± 8 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = − 3 V, I_D = − 1 mA
− 0.3 ⎯
− 1.0
V
⏐Y_fs⏐
V_DS = − 3 V, I_D = − 0.6 A
(Note 2) 1.5
2.5
⎯
S
I_D = − 0.6 A, V_GS = − 4.0 V (Note 2)
⎯
175 234
R_{DS (ON) ID = − 0.4 A, VGS = − 2.5 V (Note 2)}
⎯
230 306 ^mΩ
I_D = − 0.1 A, V_GS = − 1.8 V (Note 2)
⎯
300 460
C_iss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
250
⎯
pF
C_oss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
45
⎯
pF
C_rss
V_DS = − 10 V, V_GS = 0, f = 1 MHz
⎯
35
⎯
pF
t_on
V_DD = − 10 V, I_D = − 0.25 A,
t_off
V_GS = 0 to − 2.5 V, R_G = 4.7 Ω
⎯
12
⎯
ns
⎯
18
⎯
V_DSF
I_D = 0.8 A, V_GS = 0 V
(Note 2) ^⎯
0.85 1.2
V
1
2007-11-01