SSM6J205FE Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High-Speed Switching Applications

SSM6J205FE
-5
ID - VDS
- 10 - 4.0
-4
- 2.5
-3
-2
-1
-0
-0.0
- 1.8
- 1.5
Common Source
VGS = - 1.2 Ta = 25 °C
-0.2 -0.4 -0.6 -0.8 -1.0
Drain-Source Voltage VDS (V)
RDS(ON) - VGS
300
Common Source
Ta = 25 °C
250
- 0.8 A
200
- 0.4 A
150
ID = - 0.1 A
100
50
0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Gate-Source Voltage VGS (V)
400
350
300
250
200
150
100
50
0
-0
RDS(ON) - ID
- 1.8 V
- 2.5 V
VGS = - 4 V
Common Source
Ta = 25 °C
-1
-2
-3
-4
-5
Drain Current ID (A)
10
1
0.1
0.01
0.001
0.0001
0
ID - VGS
Ta = 85 °C
25 °C
- 25 °C
Common Source
VDS = - 3 V
1
2
Gate-Source Voltage VGS (V)
400
RDS(ON) - Ta
350 ^{Common Source}
300
- 1.8 V , - 0.1 A
250
200
- 2.5 V , - 0.4 A
150
100
VGS = - 4 V , ID = - 0.8 A
50
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient Temperature Ta(_℃)
-1
Vth - Ta
Common Source
ID = - 1 mA
-0.8
VDS = - 3 V
-0.6
-0.4
-0.2
-0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Ambient Temperature Ta(°C)
3
2007-11-01