SSM5N05FU_07 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

(Q1, Q2 common)
1000
800
I_DR – V_DS
Common Source
VGS = 0
Ta = 25°C
D
600 G
IDR
S
400
200
0
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4
Drain-Source voltage VDS (V)
1000
500
toff
300
t – I_D
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
tf
100
50 _ton
30
tr
10
1
3
10
30
100
300
Drain current ID (mA)
SSM5N05FU
C – V_DS
100
50
30
Ciss
10
Coss
5
Common Source
3 _{VGS = 0}
f = 1 MHz
Crss
Ta = 25°C
1
0.1
0.3
1
3
10
30
Drain-Source voltage VDS (V)
P_D* – Ta
400
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t
2
Cu Pad: 0.32 mm × 5)
300
200
100
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
*: Total rating
4
2007-11-01