SSM5N05FU_07 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

(Q1, Q2 common)
1000
800
600
400
200
0
0
I_D – V_DS
10 4 3
2.5
2.3
Common Source
Ta = 25°C
2.1
1.9
1.7
VGS = 1.5 V
0.5
1.0
1.5
2.0
Drain-Source voltage VDS (V)
SSM5N05FU
1000
Common Source
VDS = 3 V
100
I_D – V_GS
10
Ta = 100°C
1
25°C
−25°C
0.1
0.01
0
0.5
1.0
1.5
2.0
2.5
3.0
Gate-Source voltage VGS (V)
R_{DS (ON)} – I_D
2.0
Common Source
Ta = 25°C
1.6
1.2
2.5 V
0.8
VGS = 4 V
0.4
0
0
200
400
600
800
1000
Drain current ID (mA)
R_{DS (ON)} – V_GS
2.0
Common Source
ID = 200 mA
1.6
1.2
Ta = 100°C
0.8
25°C
0.4
−25°C
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
R_{DS (ON)} – Ta
2.0
Common Source
ID = 200 mA
1.6
1.2
2.5 V
0.8
VGS = 4 V
0.4
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
5000
Common Source
3000 ^{VDS = 3 V}
Ta = 25°C
⎪Y_fs⎪ – I_D
1000
500
300
100
10
30 50 100
300 500
Drain current ID (mA)
1000
3
2007-11-01