SSM5N05FU_07 Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

Marking
5
4
Equivalent Circuit (top view)
5
4
SSM5N05FU
DF
Q1
Q2
1
2
3
1
2
3
Electrical Characteristics (Ta = 25°C) (Q1, Q2 common)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Note2: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
I_GSS
V_GS = ±12 V, V_DS = 0
⎯
⎯
±1
μA
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
20
⎯
⎯
V
I_DSS
V_DS = 20 V, V_GS = 0
⎯
⎯
1
μA
V_th
V_DS = 3 V, I_D = 0.1 mA
0.6
⎯
1.1
V
⎪Y_fs⎪
V_DS = 3 V, I_D = 200 mA (Note2) 350
⎯
⎯
mS
I_D = 200 mA, V_GS = 4 V (Note2) ⎯
0.6 0.8
R_{DS (ON)}
Ω
I_D = 200 mA, V_GS = 2.5 V (Note2) ⎯ 0.85 1.2
C_iss
⎯
22
⎯
pF
C_rss
V_DS = 3 V, V_GS = 0, f = 1 MHz
⎯
9
⎯
pF
C_oss
⎯
21
⎯
pF
t_on
V_DD = 3 V, I_D = 100 mA,
t_off
V_GS = 0~2.5 V
⎯
60
⎯
ns
⎯
70
⎯
Switching Time Test Circuit
(a) Test circuit
2.5 V
IN
0
10 μs
V_DD = 3 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common Source
Ta = 25°C
OUT
R_L
V_DD
(b) V_IN
2.5 V
0V
(c) V_OUT
V_DD
V_{DS (ON)}
10%
90%
10%
90%
t_r
t_f
t_on
t_off
Precaution
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D = 100 μA
for this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires
a lower voltage than V_th. (The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on)})
Please take this into consideration when using the device.
2
2007-11-01