SSM3K56CT Datasheet, PDF (4/8 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

SSM3K56CT
5.5. Source-Drain Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Diode forward voltage
Note 1: Pulse measurement.
6. Marking
(Note 1)
Symbol
Test Condition
V_DSF I_D = -800 mA, V_GS = 0 V
Min Typ. Max Unit
 -0.82 -1.2
V
Fig. 6.1 Marking
Fig. 6.2 Pin Condition(top view)
4
2014-04-04
Rev.3.0