SSM3K56CT Datasheet, PDF (3/8 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

SSM3K56CT
5. Electrical Characteristics
5.1. Static Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current
I_GSS V_GS = ±6 V, V_DS = 0 V


±1
µA
Drain cut-off current
I_DSS V_DS = 16 V, V_GS = 0 V


1
Drain-source breakdown voltage
V_(BR)DSS I_D = 1 mA, V_GS = 0 V
20


V
Drain-source breakdown voltage (Note 1) V_(BR)DSX I_D = 1 mA, V_GS = -5 V
15


Gate threshold voltage
(Note 2) V_th V_DS = 3 V, I_D = 1 mA
0.4

1.0
Drain-source on-resistance
(Note 3) R_DS(ON) I_D = 800 mA, V_GS = 4.5 V

186 235 mΩ
I_D = 600 mA, V_GS = 2.5 V

230 300
I_D = 200 mA, V_GS = 1.8 V

290 480
I_D = 50 mA, V_GS = 1.5 V

360 840
Forward transfer admittance
(Note 3) |Y_fs| V_DS = 3 V, I_D = 200 mA

1.4

S
Note 1: If a reverse bias is applied between gate and source, this device enters V_(BR)DSX mode. Note that the drain-
source breakdown voltage is lowered in this mode.
Note 2: Let V_th be the voltage applied between gate and source that causes the drain current (I_D) to below (1 mA for
this device). Then, for normal switching operation, V_GS(ON) must be higher than V_th, and V_GS(OFF) must be
lower than V_th. This relationship can be expressed as: V_GS(OFF) < V_th < V_GS(ON).
Take this into consideration when using the device.
Note 3: Pulse measurement.
5.2. Dynamic Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (turn-on time)
Switching time (turn-off time)
Symbol
Test Condition
Min Typ. Max Unit
C_iss V_DS = 10 V, V_GS = 0 V,
C_rss ^{f = 1 MHz}

55

pF

6

C_oss

16

t_on V_DD = 10 V, I_D = 200 mA

5.5

ns
V_GS = 0 to 2.5 V, R_G = 50 Ω,
t_off ^{Duty ≤ 1%, Input: t}r^{, t}f ^{< 5 ns}

8.5

Common source, See Chapter 5.3
5.3. Switching Time Test Circuit
Fig. 5.3.1 Test Circuit of Switching Time
Fig. 5.3.2 Input Waveform/Output Waveform
5.4. Gate Charge Characteristics (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Test Condition
Total gate charge (gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Q_g
Q_gs1
Q_gd
V_DD = 10 V, V_GS = 4.5 V,
I_D = 800 mA
3
Min Typ. Max Unit

1.0

nC

0.12


0.4

2014-04-04
Rev.3.0