SSM3K56CT Datasheet, PDF (1/8 Pages) Toshiba Semiconductor – MOSFETs Silicon N-Channel MOS

MOSFETs Silicon N-Channel MOS
SSM3K56CT
1. Applications
• High-Speed Switching
2. Features
(1) 1.5-V gate drive voltage.
(2) Low drain-source on-resistance
: R_DS(ON) = 235 mΩ (max) (@V_GS = 4.5 V)
R_DS(ON) = 300 mΩ (max) (@V_GS = 2.5 V)
R_DS(ON) = 480 mΩ (max) (@V_GS = 1.8 V)
R_DS(ON) = 840 mΩ (max) (@V_GS = 1.5 V)
3. Packaging and Pin Configuration
SSM3K56CT
1.Gate
2.Source
3.Drain
CST3
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, T_a = 25)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
20
V
Gate-source voltage
V_GSS
±8
Drain current (DC)
(Note 1)
I_D
800
mA
Drain current (pulsed)
(Note 1),(Note 2)
I_DP
1600
Power dissipation
(Note 3)
P_D
500
mW
Channel temperature
T_ch
150

Storage temperature
T_stg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1%
Note 3: Mounted on an FR4 board.(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Start of commercial production
2013-04
1
2014-04-04
Rev.3.0