SSM3K17FU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2
1.6
1.2
0.8
0.4
0
−50
V_th – Ta
Common source
VDS = 3 V
ID = 1µA
0
50
100
150
Ambient temperature Ta (°C)
SSM3K17FU
C – V_DS
50
Common source
30
VGS = 0 V
f = 1 MHz
Ta = 25°C
10
5
Ciss
3
Coss
Crss
1
1
35
10
30 50 100
Drain-Source voltage VDS (V)
1000
500
300
100
50
30
10
5
3
1
t – I_D
ton
tr
toff
tf
Common source
VDD = 3 V
VGS = 0~3 V
RG = 10 Ω
Ta = 25°C
3 5 10
30 50 100
300 500 1000
Drain current ID (mA)
−250
−200
Common source
VGS = 0 V
Ta = 25°C
D
I_DR – V_DS
−150
G
−100
S
−50
0
0
−0.4
−0.8
−1.2
−1.6
−2
Drain-Source voltage VDS (V)
250
200
150
100
50
0
0
P_D – Ta
Mounted on FR4 board.
(25.4 mm × 25.4 mm × 1.6 t,
Cu Pad: 0.6 mm² × 3)
40
80
120
160
Ambient temperature Ta (°C)
4
2002-04-09