SSM3K17FU Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

100
Common source
Ta = 25°C
80
60
I_D – V_DS
5
4.5
4
40
VGS = 2.5 V
20
0
0
0.4
0.8
1.2
1.6
2
Drain-Source voltage VDS (V)
100
Common source
50 ^{Ta = 25°C}
R_{DS (ON)} – I_D
30
VGS = 2.5 V
4V
10
5
3
1
0.5
1
35
10
30 50 100
Drain current ID (mA)
SSM3K17FU
1000
Common source
VDS = 3 V
100
I_D – V_GS
10
1 Ta = 150°C
0.1
75°C
0.01
25°C
−25°C
0.001
0
1
2
3
4
5
6
7
Gate-Source voltage VGS (V)
40
Common source
ID = 10 mA
R_{DS (ON)} – Ta
30
VGS = 2.5 V
20
4V
10
0
−50
0
50
100
150
Ambient temperature Ta (°C)
R_{DS (ON)} – V_GS
40
Common source
Ta = 25°C
30
20
100 mA
10
ID = 10 mA
0
0
2
4
6
8
10
Gate-Source voltage VGS (V)
500
Common source
300 VDS = 3 V
Ta = 25°C
ïY_fsï – I_D
100
50
30
10
1
35
10
30 50 100
Drain current ID (mA)
3
2002-04-09