SSM3K17FU Datasheet, PDF (2/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K17FU
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Drain-Source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-Source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Turn-on time
Turn-off time
Symbol
Test Condition
I_GSS
V _{(BR) DSS}
I_DSS
V_th
½Y_fs½
R_{DS (ON)}
C_iss
C_rss
C_oss
t_on
t_off
V_GS = ±7 V, V_DS = 0
I_D = 0.1 mA, V_GS = 0
V_DS = 50 V, V_GS = 0
V_DS = 3 V, I_D = 1 µA
V_DS = 3 V, I_D = 10 mA
I_D = 10 mA, V_GS = 4 V
I_D = 10 mA, V_GS = 2.5 V
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DS = 3 V, V_GS = 0, f = 1 MHz
V_DD = 3 V, I_D = 20 mA, V_GS = 0~3 V,
R_G = 10 Ω, R_L = 150 Ω
Min Typ. Max Unit
―
―
±5
µA
50
―
―
V
―
―
1
µA
0.9
―
1.5
V
20
40
―
mS
―
12
20
Ω
―
22
40
―
7
―
pF
―
3
―
pF
―
7
―
pF
―
100
―
ns
―
40
―
Switching Time Test Circuit
(a) Test circuit
(b) V_IN
3V
0
1 µs
IN _{10 Ω}
V_DD = 3 V
Duty ^<= 1%
V_IN: t_r, t_f < 5 ns
(Z_out = 50 Ω)
Common source
Ta = 25°C
OUT
R_L
V_{DD (c) VOUT}
3V
0V
V_DD
V_{DS (ON)}
90%
10%
10%
90%
t_r
t_f
t_on
t_off
2
2002-04-09