SSM3K15FU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

1000
Common Source
500 _{VDS = 3 V}
300 Ta = 25°C
ïY_fsï – I_D
100
50
30
10
5
3
1
1
10
100
Drain current I_D (mA)
1000
SSM3K15FU
I_DR – V_DS
250
Common Source
VGS = 0 V
200 ^{Ta = 25°C}
D
150
G
100
IDR
S
50
0
0
-0.2 -0.4 -0 6 -0.8 -1 -1 2 -1.4
Drain-Source voltage V_DS (V)
10000
5000
3000
toff
1000 ^tf
500
300
t – I_D
Common Source
VDD = 5 V
VGS = 0~5 V
Ta = 25°C
100
50 ^ton
30
tr
10
0.1
1
10
100
Drain current I_D (mA)
10000
5000
3000
toff
1000
500
tf
300
ton
100
tr
50
30
t – I_D
Common Source
VDD = 3 V
VGS = 0~2.5 V
Ta = 25°C
10
0.1
1
10
100
Drain current I_D (mA)
100
50
30
10
5
3
1
05
03
0.1
0.1
C – V_DS
Common Source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Ciss
Coss
Crss
1
10
100
Drain-Source voltage V_DS (V)
P_D – Ta
250
Mounted on FR4 board
(C2u5.P4amd:m0´_{62m5m.42m´}m3)´ 1.6 t
200
150
100
50
0
0
20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
4
2002-04-01