SSM3K15FU Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

250
200
150
100
50
0
0
10 4
I_D – V_DS
Common Source
3
Ta = 25°C
2.7
2.5
2.3
VGS = 2.1 V
0.5
1
1.5
2
Drain-Source voltage V_DS (V)
SSM3K15FU
1000
100
Common Source
VDS = 3 V
I_D – V_GS
Ta = 100°C
10
25°C
1
-25°C
0.1
0.01
0
1
2
3
4
Gate-Source voltage V_GS (V)
R_{DS (ON)} – I_D
10
Common Source
Ta = 25°C
8
6
VGS = 2 5 V
4
4V
2
0
0
40
80
120
160
200
Drain current I_D (mA)
R_{DS (ON)} – V_GS
6
Common Source
ID = 10 mA
5
4
Ta = 100°C
3
25°C
2
-25°C
1
0
0
2
4
6
8
10
Gate-source voltage V_GS (V)
R_{DS (ON)} – Ta
8
Common Source
7 ^{ID = 10 mA}
6
5
VGS = 2 5 V
4
3
4V
2
1
0
-25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
V_th – Ta
2
Common Source
1 8 ID = 0.1 mA
1 6 ^{VDS = 3 V}
1.4
12
1
08
06
0.4
02
0
-25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
3
2002-04-01