SSM3K15FU Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

SSM3K15FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K15FU
High Speed Switching Applications
Analog Switch Applications
Unit: mm
· Small package
· Low on resistance
: Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DS
30
V
Gate-source voltage
V_GSS
±20
V
Drain current
DC
I_D
Pulse
I_DP
100
mA
200
Drain power dissipation (Ta = 25°C)
P_D (Note)
150
mW
Channel temperature
T_ch
150
°C
Storage temperature
T_stg
-55~150
°C
Note: Mounted on FR4 board
(25.4 mm ´ 25.4 mm ´ 1.6 t, Cu Pad: 0.6 mm² ´ 3)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1E
Weight: 0.006 g (typ.)
0.6 mm
1.0 mm
Marking
3
Equivalent Circuit
3
DP
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2002-04-01