SSM3K124TU_14 Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

|Y_fs| – I_D
10
Common Source
VDS = 5 V
Ta = 25°C
3
1
0.3
0.1
0.01
0.1
1
10
Drain current I_D (A)
C – V_DS
1000
500
300
100
50
30
10
0.1
Common Source
Ta = 25°C
f = 1 MHz
V_GS = 0 V
1
Ciss
Coss
Crss
10
100
Drain–source voltage V_DS (V)
1000
800
a: Mounted on an FR4 board
P – T b: M(2o5u.n4texd2o5n.4axc1e.r6ammimc bDoCarudPada: 645 mm2)
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm²)
b
600
a
400
200
0
–40 –20 0 20 40 60 80 100 ₁₂₀ 140 160
Ambient temperature Ta (°C)
SSM3K124TU
I_DR – V_DS
10
Common Source _D
V_GS = 0 V
1 _{Ta = 25°C}
I_DR
G
S
0.1
Ta = 100 °C
0.01
0.001
0.0001
0
25 °C
−25 °C
–0.2
–0.4 –0.6 –0.8 –1.0 –1.2
Drain–source voltage V_DS (V)
600
toff
100
tf
t – I_D
Common Source
VDD = 10 V
VGS = 0 to 4 V
Ta = 25°C
RG = 10 Ω
10 ^ton
tr
1
0.01
0.1
1
10
Drain current I_D (A)
t – I_D
600
c
100
b
a
10
a: Mounted on a ceramic board
(25.4 x 25.4 x 0.8 mm Cu Pad : 645 mm²)
b: Mounted on an FR4 board
(25.4 x 25.4 x 1.6 mm Cu Pad : 645 mm²)
c: Mounted on an FR4 board
1
(25.4 x 25.4 x 1.6 mm Cu Pad : 0.36 mm² x 3)
0.001 0.01
0.1
1
10
100 600
Pulse Width t_w (s)
4
2014-03-01