SSM3K124TU_14 Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

I_D – V_DS
5
10 V 6V 4 V 3.6V
VGS = 3.3V
4
3
2
1
Common Source
Ta = 25°C
0
0
0.2
0.4
0.6
0.8
1
Drain–source voltage V_DS (V)
SSM3K124TU
I_D – V_GS
10
Common Source
V_DS = 5 V
1
0.1
0.01
0.001
Ta = 100 °C
25 °C
−25 °C
0.0001
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Gate–source voltage V_GS (V)
R_{DS (ON)} – V_GS
300
ID = 1.5 A
250
Common Source
200
150
100
25 °C
Ta =100 °C
50
0
0
2
−25 °C
4
6
8
10
Gate–source voltage V_GS (V)
R_{DS (ON)} – Ta
500
Common Source
400
300
200
100
0
−50
ID = 1.0A / VGS = 4.0 V
1.5 A / 10V
0
50
100
150
Ambient temperature Ta (°C)
R_{DS (ON)} – I_D
300
Common Source
250 ^{Ta = 25°C}
200
150
100
VGS = 4.0Ｖ
50
10V
0
0
1
2
3
4
5
Drain current I_D (A)
V_th – Ta
2.0
1.5
1.0
0.5
Common source
VDS = 5 V
0 ^{ID = 1 mA}
−50
0
50
100
150
Ambient temperature Ta (°C)
3
2014-03-01