SSM3K124TU_14 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM3K124TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K124TU
High Speed Switching Applications
• 4 V drive
• Low ON-resistance:
R_on = 120 mΩ (max) (@V_GS = 4V)
R_on = 83 mΩ (max) (@V_GS = 10V)
2.1±0.1
1.7±0.1
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
Gate–source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
V_DS
30
V
V_GSS
± 20
V
I_D
2.4
A
I_DP
4.8
P_{D (Note 1)}
800
mW
P_{D (Note 2)}
500
T_ch
150
°C
T_stg
−55 to 150
°C
Note:
Note 1:
Note 2:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Mounted on a ceramic board.
(25.4 mm × 25.4 mm × 0.8 t, Cu Pad: 645 mm² )
Mounted on an FR4 board.
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm² )
Electrical Characteristics (Ta = 25°C)
1
2
3
1: Gate
2: Source
3: Drain
UFM
JEDEC
―
JEITA
―
TOSHIBA
2-2U1A
Weight: 6.6 mg (typ.)
Characteristic
Drain–source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Drain–source forward voltage
Note3: Pulse test
Symbol
Test Condition
Min Typ. Max Unit
V _{(BR) DSS} I_D = 1 mA, V_GS = 0
30
⎯
⎯
V
I_DSS
V_DS = 30 V, V_GS = 0
⎯
⎯
1
μA
I_GSS
V_GS = ± 20 V, V_DS = 0
⎯
⎯
±1
μA
V_th
V_DS = 5 V, I_D = 1 mA
1.1
⎯
2.6
V
⏐Y_fs⏐
V_DS = 5 V, I_D = 1.5 A
(Note3) 2.5
4.9
⎯
S
R_{DS (ON)}
I_D = 1.5 A, V_GS = 10 V
I_D = 1.0 A, V_GS = 4 V
(Note3)
⎯
(Note3)
⎯
64
83
mΩ
88
120
C_iss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
180
⎯
pF
C_oss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
100
⎯
pF
C_rss
V_DS = 10 V, V_GS = 0, f = 1 MHz
⎯
38
⎯
pF
t_on
V_DD = 10 V, I_D = 1.5 A,
t_off
V_GS = 0 to 4 V, R_G = 10 Ω
⎯
13
⎯
ns
⎯
14
⎯
V_DSF
I_D = − 2.4 A, V_GS = 0 V
(Note3) ⎯ – 0.9 – 1.25 V
Start of commercial production
2006-01
1
2014-03-01