SSM3K02T Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

.
t – I_D
500
toff
100
tf
50
30 ^ton
Common Source
VDD = 15 V
VGS = 0~2.5 V
RG = 4.7 Ω
Ta = 25°C
tr
10
0.01
0.03
0.1
0.3
1
Drain current I_D (A)
Safe operating area
10
ID max (pulsed)
ID max (continuous)
1 ms*
10 ms*
1
DC operation
Ta = 25°C
10 s*
Mounted on FR4 board
0.1
(25.4 mm × 25.4 mm
× 1.6 t,
2
Cu Pad: 645 mm )
*: Single nonrepetitive
Pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
VDSS
max
0.01
0.1
1
10
100
Drain-source voltage V_DS (V)
r_th – tw
1000
SSM3K02T
1.5
t = 10 s
1.25
1
P_D – Ta
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
0.75 _DC
0.5
0.25
0
0
25
50
75
100
125
150
Ambient temperature Ta (°C)
100
10
1
0.001
0.01
Single pulse
Mounted on FR4 board
(25.4 mm × 25.4 mm × 1.6 t,
2
Cu Pad: 645 mm )
0.1
1
10
100
1000
Pulse width tw (s)
4
2007-11-01