SSM3K02T Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

2.5
2 ₁₀
4
1.5
1
0.5
I_D – V_DS
2.5
2.1 1.9
Common Source
Ta = 25°C
1.7
VGS = 1.5 V
0
0
0.5
1
1.5
2
Drain-Source voltage V_DS (V)
280
240
200
160
120
80
40
0
0.5
R_{DS (ON)} – I_D
Common Source
Ta = 25°C
VGS = 2.5 V
4V
1.0
1.5
2.0
2.5
Drain current I_D (A)
SSM3K02T
10000
1000
Common Source
VDS = 3 V
I_D – V_GS
100
25°C
10
Ta = 100°C
1
0.1
−25°C
0.01
0
0.5
1
1.5
2
Gate-Source voltage V_GS (V)
R_{DS (ON)} – Ta
400
Common Source
ID=1.25A
300
VGS = 2.5 V
200
4V
100
0
−25
0
25
50
75 100 125 150
Ambient temperature Ta (°C)
|Y_fs| – I_D
30
Common Source
VDS = 3 V
10 ^{Ta = 25°C}
3
1
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
Drain current I_D (A)
C – V_DS
1000
300
Ciss
100
Coss
30
Common Source
10 VGS = 0
f = 1 MHz
Ta = 25°C
3
0.1
0.3
1
3
Crss
10
30
100
Drain-Source voltage V_DS (V)
3
2007-11-01