SSM3K02T Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02T
SSM3K02T
High Speed Switching Applications
• Small package
• Low on resistance: R_on = 200 mΩ (max) (V_GS = 4 V)
: R_on = 250 mΩ (max) (V_GS = 2.5 V)
• Low gate threshold voltage: V_th = 0.6~1.1 V (V_DS = 3 V, I_D = 0.1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V_DS
30
V
V_GSS
±10
V
Drain current
DC
Pulse
I_D
2.5
A
I_DP
5.0
Drain power dissipation (Ta = 25°C)
P_D
1250
mW
(Note 1)
Channel temperature
T_ch
150
°C
JEDEC
―
Storage temperature range
T_stg
−55~150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
TOSHIBA
2-3S1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.01 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1:
Mounted on FR4
(25.4 mm × 25.4
board
mm × 1.6
t,
Cu
pad:
645
mm²,
t
=
10
s)
Note 2: The pulse width limited by max channel temperature.
Marking
3
Equivalent Circuit
3
KU
1
2
1
2
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01