SSM3J46CTB Datasheet, PDF (4/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

10
Common Source
VDS = -3 V
Ta = 25°C
|Y_fs| – I_D
3
1
0.3
0.1
-0.01
-0.1
-1
-10
Drain current I_D (A)
C – V_DS
1000
300
Ciss
100
30
10
-0.1
Common Source
Ta = 25 °C
f = 1 MHz
VGS = 0 V
-1
Coss
Crss
-10
-100
Drain-source voltage V_DS (V)
SSM3J46CTB
10
Common Source
VGS = 0 V
D
1
G
I_DR
I_DR – V_DS
S
0.1
Ta =100 °C
0.01
25 °C
0.001
0
-25 °C
0.2
0.4
0.6
0.8
1.0
1.2
Drain–source voltage V_DS (V)
10000
toff
1000
tf
100
t – I_D
Common Source
VDD = -10 V
VGS = 0 to -2.5 V
Ta = 25 °C
RG = 4.7Ω
10 ^ton
tr
1
-0.001
-0.01
-0.1
-1
-10
Drain current I_D (A)
Dynamic Input Characteristic
-8
Common Source
ID = -2.0 A
Ta = 25°C
-6
-4
VDD = - 10 V
VDD = - 16 V
-2
0
0
2
4
6
8
10
Total Gate Charge Qg (nC)
4
2009-09-28