SSM3J46CTB Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM3J46CTB
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J46CTB
○ Power Management Switch Applications
• 1.5 V drive
• Low ON-resistance:R_on = 250 mΩ (max) (@V_GS = -1.5 V)
R_on = 178 mΩ (max) (@V_GS = -1.8 V)
R_on = 133 mΩ (max) (@V_GS = -2.5 V)
R_on = 103 mΩ (max) (@V_GS = -4.5 V)
0.8±0.05
B
A
Unit: mm
0.48
+0.02
-0.03
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
DC
Pulse
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
-20
V
V_GSS
±8
V
I_D
-2.0
A
I_DP
-4.0
P_D (Note 1)
1000
mW
T_ch
150
°C
T_stg
−55 to 150
°C
BOTTOM VIEW
0.05±0.03
0.45
0.25±0.03
12
0.04 M A B
3
0.70±0.03
CST3B
1. Gate
0.04 M A B ^{2. Source}
3. Drain
Note: Using continuously under heavy loads (e.g. the application of high
JEDEC
―
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-1T1A
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 1.5 mg (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on a FR4 board.
(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm²)
Marking (top view) Pin Condition (top view) Equivalent Circuit
SV
Polarity mark
1
3
2
1. Gate
2. Source
Polarity mark
(on the top)
3. Drain
*Electrodes: on the bottom
3
1
2
1
2009-09-28