SSM3J46CTB Datasheet, PDF (2/6 Pages) Toshiba Semiconductor – Power Management Switch Applications

SSM3J46CTB
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min Typ. Max Unit
Drain-Source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain–source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Turn-on time
Turn-off time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source forward voltage
V _{(BR) DSS} I_D = −1 mA, V_GS = 0 V
−20
⎯
⎯
V
V _{(BR) DSX} I_D = −1 mA, V_GS = 5 V
(Note 3) −15
⎯
⎯
V
I_DSS V_DS = −20 V, V_GS = 0 V
⎯
⎯
−1
μA
I_GSS V_GS = ±8 V, V_DS = 0 V
⎯
⎯
±1
μA
V_th
V_DS = −3 V, I_D = −1 mA
−0.3
⎯ −1.0
V
⏐Y_fs⏐ V_DS = −3 V, I_D = −1.0 A
(Note 2) 2.6
5.2
⎯
S
I_D = -1.5 A, V_GS = −4.5 V
(Note 2) ⎯ 88.5 103
R_{DS (ON)} ^{ID = -1.0 A, VGS = −2.5 V}
I_D = -0.5 A, V_GS = −1.8 V
(Note 2) ⎯ 107.5 133
mΩ
(Note 2) ⎯
130 178
I_D = -0.25 A, V_GS = −1.5 V (Note 2) ⎯
151 250
C_iss
C_oss
C_rss
V_DS = −10 V, V_GS = 0 V
f = 1 MHz
⎯
290
⎯
⎯
44
⎯
pF
⎯
32
⎯
t_on
V_DD = −10 V, I_D = −0.5 A
t_off
V_GS = 0 to −2.5 V, R_G = 4.7 Ω
⎯ 13.4 ⎯
ns
⎯ 46.2 ⎯
Q_g
Q_gs
V_DD = −10 V, I_DS = −2.0 A,
V_GS = − 4.5 V
Q_gd
⎯
4.7
⎯
⎯
3.7
⎯
nC
⎯
1.0
⎯
V_DSF I_D = 2.0 A, V_GS = 0 V
(Note 2) ⎯
0.9 1.2
V
Note2: Pulse test
Note3: V_DSX mode (the application of a plus voltage between gate and source) may cause decrease in maximun
rating of drain-source voltage
Switching Time Test Circuit
(a) Test Circuit
0
IN
−2.5V
10 μs
OUT
R_L
V_DD
(b) V_IN
0V
−2.5 V
V_{DS (ON)}
10%
90%
90%
V_DD = -10 V
R_G = 4.7 Ω
Duty ≤ 1%
V_IN: t_r, t_f < 5 ns
Common Source
Ta = 25°C
10%
V_DD
t
t_f
t_on
t_off
Notice on Usage
V_th can be expressed as the voltage between gate and source when the low operating current value is I_D = -1 mA for
this product. For normal switching operation, V_{GS (on)} requires a higher voltage than V_th and V_{GS (off)} requires a lower
voltage than V_th. (The relationship can be established as follows: V_{GS (off)} < V_th < V_{GS (on).})
Take this into consideration when using the device.
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
2
2009-09-28