SSM3J15CT Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications

1000
100
|Yfs| - ID
Common Source
VDS=-3V
Ta=25°C
10
1
-1
-10
-100
-1000
Drain current ID (mA)
100
10
1
-0.1
C - VDS
Common Source
VGS=0V
f =1MHz
Ta=25°C
Ciss
Coss
Crss
-1
-10
Drain-Source voltage VDS (V)
-100
PD - Ta
250
mounted on FR4 board
(10mm×10mm×1.0t
200
Cu Pad:100mm2)
150
100
50
0
0 20 40 60 80 100 120 140 160
Ambient temperature (°C)
SSM3J15CT
IDR - VDS
-250
Common Source
VGS=0V
-200 Ta=25°C
-150
-100
-50
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
Drain-Source voltage VDS (V)
10000
1000
tof f
tf
t - ID
Common Source
VDD=-5V
VGS=0~-5V
Ta=25°C
100
ton
tr
10
-0.1
-1
-10
Drain Current ID (mA)
-100
4
2007-11-01