SSM3J15CT Datasheet, PDF (3/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications

SSM3J15CT
-250
-200
-150
-100
-50
0
0
40
30
ID - VDS
Common Source
Ta=25°C
-10 -7 _-5
-4
-3.3
-3.0
-2.7
-2.5
VGS=-2.3V
-0.5
-1
-1.5
-2
Drain-Source Voltage VDS(V)
RDS(ON) - ID
Common Source
Ta=25°C
20
10
0
-1
VGS=-2.5V
-4V
-10
-100
Drain Current ID(mA)
30
Common Source
RDS(ON) - Ta
-1000
20
VGS=-2.5V,ID=-1mA
10
-4V,-10mA
0
-25 0 25 50 75 100 125 150
Ambient temparature Ta(°C)
-1000
-100
Common Source
VDS=-3V
ID - VGS
-10
Ta=100°C
25°C
-1
-25°C
-0.1
-0.01
0
-1
-2
-3
-4
-5
Gate-Source Voltage VGS(V)
RDS(ON) - VGS
20
Source Common
18
ID=-1mA
16
14
12
10
Ta=100°C
8
6
25°C
4
-25°C
2
0
0
-2
-4
-6
-8
-10
Gate-Source Voltage VGS (V)
Vth - Ta
-2
-1.8
Common Source
ID=-0.1mA
-1.6
VDS=-3V
-1.4
-1.2
-1
-0.8
-0.6
-0.4
-0.2
0
-25 0
25 50 75 100 125 150
Ambient temparature Ta(°C)
3
2007-11-01