SSM3J15CT Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Analog Switch Applications

SSM3J15CT
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
SSM3J15CT
High-Speed Switching Applications
Analog Switch Applications
• Optimum for high-density mounting in small packages
• Low ON-resistance : R_on = 12 Ω (max) (@V_GS = −4 V)
: R_on = 32 Ω (max) (@V_GS = −2.5 V)
0.6±0.05
0.5±0.03
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
３
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V_DS
−30
V
Gate-Source voltage
V_GSS
±20
V
Drain current
DC
Pulse
I_D
−100
mA
I_DP
−200
Drain power dissipation (Ta = 25°C) P_D (Note 1)
100
mW
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55~150
°C
１
２
0.35±0.02
0.15±0.03
0.05±0.03
Note:
Using continuously under heavy loads (e.g. the application of
CST3
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
-
reliability significantly even if the operating conditions (i.e.
JEITA
-
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-1J1B
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 0.75 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Mounted on an FR4 board
(10 mm × 10 mm × 1.0 t, Cu Pad: 100 mm² )
Marking (Top View)
Polarity mark
Pin Condition (Top View)
Polarity mark (on the top)
Equivalent Circuit
3
1
S1
3
2
1. Gate
1
2
2. Source
3. Drain
*Electrodes: on the bottom
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, ensure that the environment is protected
against electrostatic discharge. Operators should wear anti-static clothing, and containers and other objects that come
into direct contact with devices should be made of anti-static materials.
1
2007-11-01