SSM3J108TU Datasheet, PDF (4/5 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon P-Channel MOS Type High Speed Switching Applications

SSM3J108TU
10.0
1.0
|Yfs| - ID
25°C
-25°C
Ta=85°C
0.1
-0.01
1000
Common Source
VDS=-3V
Ta=25°C
-0.1
-1
-10
Drain current ID (A)
C - VDS
Ciss
100
Common Source
VGS=0V
f =1MHz
Ta=25°C
Coss
Crs s
10
0.1
1
10
100
Drain-Source voltage VDS (V)
1000
800
b
600
a
400
PD - Ta
a: mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
b:mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
200
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta(°C)
-10
IDR - VDS
Common Source
VGS=0V
Ta=25°C
-1
25°C
-0.1
-25°C
-0.01
Ta=85°C
-0.001
0
0.2
0.4
0.6
0.8
1
Drain-Source voltage VDS (V)
1000
toff
100
tf
ton
10
tr
t - ID
Common Source
VDD=10V
VGS=0 to 2.5V
Ta=25°C
1
-0.01
-0.1
-1
-10
Drain current ID (A)
1000
Rth - tw
c
100
10
1
0.001 0.01
b
a
Single pulse
a:Mounted on ceramic board
(25.4mm×25.4mm×0.8mm)
Cu Pad :25.4mm×25.4mm
b:Mounted on FR4 board
(25.4mm×25.4mm×1.6mm)
Cu Pad :25.4mm×25.4mm
c:Mounted on FR4 Board
(25.4mm×25.4mm×1.6mm)
Cu Pad :0.45mm×0.8mm×3
0.1
1
10
Pulse w idth tw (S)
100 1000
4
2007-11-01